Energetic neutral beam lithography/epitaxy (ENABLE) was used for etching very high-aspect-ratio nanoscale structures into polymers and for growing templated AlN films at low temperatures. Various methods were used for masking polymeric films for selective etching by energetic oxygen atoms to fabricate sub-100 nm structures with aspect ratios exceeding 35:1. ENABLE was also utilized for low-temperature growth of AIN into previously etched polymer templates to directly form AIN wires. By taking advantage of the unique processing capabilities of ENABLE, new opportunities for making delicate nanostructures are made possible. (c) 2005 American Vacuum Society.