Photoluminescence (PL) and electroluminescence (EL) measurements are performed on Si/SiO2 multiple quantum wells fabricated by using a combination of remote plasma enhanced chemical vapor deposition (RPECVD) and rapid thermal annealing (RTA). A significant enhancement of light emission is observed from nanocrystalline Si wells embedded in a SiO2 matrix. The enhancement depends critically on additional annealing processes carried out after the RPECVD deposition. (c) 2005 American Vacuum Society.