Radio frequency (RF) plasma nitriding using different input plasma processing powers (250-600 W) improves the surface of titanium by forming hard phases of TiN, Ti2N, and Ti (N) into the surface. The characteristics of the compound layer have been investigated by optical microscopy, microhardness measurements, and X-ray diffraction. The effect of plasma power on the sample temperature, electron temperature, and plasma density was studied using Langmuir double probe. The measured surface hardness value of the compound layer is 2190 HV 0.1 for treated sample at plasma power 500 W. The compound thickness continuously increases as the plasma power increases. The highest nitriding rate of 5.88 mu m(2)/s was recorded when the input plasma power was adjusted at 550 W. This high nitriding rate of treated titanium samples is ascribed to the high concentration of active nitrogen species in the plasma atmosphere and the formed microcracks near to the surface of the sample during the plasma processing. We have proposed that at low input plasma power (low temperature) the interstitial diffusion is the main mechanism. However, vacancy-controlled diffusion for high input plasma power (high temperature) is probably the one needed to surmount the energy barrier. (c) 2005 Elsevier B.V. All rights reserved.