Polycrystalline silicon (Poly-Si) films with large gains are successfully fabricated on glasses in a self-assembled RF-biased RF-PECVD tubular system. Both inductively coupled and capacitively coupled RF powers are employed. High purity (99.99%) SiH4, H-2 and Ar are introduced as resource gases. All crystalline films obtained in this study exhibit (111)-Si preferred orientation. Poly-Si films with large grains (about 0.15-0.3 min in size) which are aggregate of fine crystals (about 50 nm in size) are deposited at the deposition temperature less than 77 degrees C. However, the improvement of crystallinity and the grain size are still under investigation. (c) 2005 Elsevier B.V. All rights reserved.