Thin films of (Cu/In/Se) were fabricated by evaporated elemental layers of Cu, In and Se on Si (100) and on glass substrates at T-s = 250 degrees C. Films with phase chalcopyrite structure and strong (1 1 2) preferred orientation were produced. EDX showed uniform compositional properties of the films over a substrate area of 1 cm(2). The optical energy band gap of 0.984 eV was obtained and photoluminescence measurements have been carried out in as-deposited polycrystalline Cu/In/Se thin films deposited onto (100) oriented Si wafers doped with 10(15) cm(-3) of boron. The PL spectra of CuInSe2 show emission peaks at 0.87 eV ranging from 0.75 to 0.98 eV. The broad emission band is ascribed to donor-acceptor pair (DAP) transition. (c) 2006 Elsevier B.V. All rights reserved.