Intrinsic microcrystalline silicon films have been prepared with very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from silane/hydrogen mixture at 180 degrees C. The effect of silane concentration and discharge power on the growth of silicon films was investigated. Samples were investigated by Fourier transform infrared spectroscopy, Raman scattering and X-ray diffraction. The Raman spectrum shows that the morphological transition from microcrystalline to amorphous occurs under conditions of high silane concentration and low discharge power. X-ray diffraction spectra indicate a preferential growth direction of all microcrystalline silicon films in the (111) plane. In addition, a solar cell with an efficiency of 5.1% has been obtained with the intrinsic microcrystalline layer prepared at 10 W. (c) 2006 Springer Science + Business Media, Inc.