This work is a quantitative study of the conditions required for a long-term passivation of the interface siliconalkyl monolayers prepared by thermal hydrosilyation of neat 1-alkenes on well-defined H-Si(111) surfaces. We present electrochemical capacitance measurements (C-U) in combination with ex situ atomic force microscopy (AFM) observations and X-ray photoelectron spectroscopy (XPS) measurements. Capacitance measurements as a function of the reaction time and XPS data reveal close correlations between the chemical composition at the interface and its electronic properties. A very low density of states is found if suboxide formation is carefully prevented. The monitoring of C-U plots and AFM imaging upon exposure of the sample in diverse conditions indicate that the initial electronic properties and structure of the interface are long-lasting only when the monolayer surface coverage is theta > 0.42. A model demonstrates that this threshold value corresponds to a monolayer with intermolecular channels narrower than similar to 2.82 (A) over circle, which is equal to the diameter of a water molecule. Water exclusion from the monolayer promotes long-term passivation of the silicon surface against oxidation in air and water as well as perfect corrosion inhibition in 20% NH4F We provide two criteria to assess when a sample is optimized: The first one is an effective dielectric constant < 2.5, and the second one is a very characteristic energy diagram at open circuit potential.