The temperature dependence of the field effect mobility was measured for solution-grown single-crystal Ge nanowires. The nanowires were synthesized in hexane from diphenylgermane by the supercritical fluid-liquid-solid process using gold nanocrystals as seeds. The nanowires were chemically treated with isoprene to passivate their surfaces. The electrical properties of individual nanowires were then measured by depositing them on a Si substrate, followed by electrical connection with Pt wires using focused ion beam assisted chemical vapor deposition. The nanowires were positioned over TaN or Au electrodes covered with ZrO2, dielectric that were used as grates to apply external potentials to modulate the conductance. Negative gate potentials increased the Ge nanowire conductance, characteristic of a p-type semiconductor. The temperature-dependent source/drain current-voltage measurements under applied gate potential revealed that the field effect mobility increased with increasing temperature, indicating that the carrier mobility through the nanowire is probably dominated either by a hopping mechanism or by trapped charges in fast surface states.