Direct pattern transfer technology by room-temperature nanocontact printing using hydrogen silsesquioxane (HSQ) and Ag paste, which takes advantage of adhesion properties of these transfer materials, has been developed. The use of poly(ethylene) laminated on poly (methylmethacrylate) sheet has been proposed as the soft template for the contact printing. The HSQ transferred pattern with 35 nm linewidth was obtained onto Si surface. In addition, 1,mu m linewidth, and 2 mu m pitch Ag patterns were successfully transferred from the soft template to the SiO2/Si substrate. The transferred Ag wiring with 1 mu m linewidth showed good conduction characteristic, resistivity to be 1.7 X 10(-7) Omega M. (c) 2006 American Vacuum Society.