The phenomena related to the electrical activation of low energy implanted B (3 keV,2 X 10(14) B/cm(2)) in laterally submicron confined Si regions were studied by high resolution quantitative scanning capacitance microscopy (SCM). The B diffusion and its precipitation into electrically inactive B-Si interstitial clusters (BICs) were studied by varying the implant window size from 3.2 to 0.38 mu m and annealing at 800 degrees C from 12 to 200 min in N-2 ambient. In particular, the electrically active B fraction is followed by calculating the carrier concentration profile from SCM data with increasing the annealing time. Both the B reactivation and diffusion exhibit a strong dependence on the window width. The higher electrically active B fraction is always found in the narrowest window, which also first recovers the almost complete electrical activation. The B diffusivity enhancement for the 3.2 mu m window size is more than one order of magnitude higher than for the 0.38 mu m window. (c) 2006 American Vacuum Society.