화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.24, No.1, 482-488, 2006
Development of plasma-based implant for silicon devices
Commercial usage of plasma-based implantation for silicon devices has commenced. This represents the culmination of decades of activity at universities, research labs, and finally semiconductor equipment manufacturers. The technique offers great potential for both economic benefits, as a much higher throughput process than traditional implant, as well as enabling new fabrication options for advanced CMOS, nonplanar implant, thin film formation and modification. This review of plasma-based implant for commercial semiconductor fabrication will focus on results thus far, current status, and the prospects for both implant and nonimplant applications. Due to the unique capabilities of plasma-based implantation for shallow depth and high dose, some discussion of metrology, diagnostics, and the process control needed for a manufacturing technology will be included. (c) 2006 American Vacuum Society.