The structural properties of poly-Si films obtained by aluminium induced crystallization (AIC) in different annealing atmospheres N-2, N-2 + H-2 and H-2 - have been studied by microprobe Raman spectroscopy, optical microscopy and X-ray diffraction spectroscopy (XRD). The Al and amorphous Si films were deposited by magnetron sputtering. The results indicate that the structure of the poly-Si films is improved when the annealing is performed in an atmosphere containing H-2. The presence of H-2 leads to better structural properties of poly-Si prepared by AlC. It is supposed that H-2 stimulates the crystalline grain growth during annealing by increasing the diffusion rates of Al and Si. (c) 2005 Elsevier B.V. All rights reserved.