In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is similar to 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10(5) W/E cycles even at the high operation temperature of 85 degrees C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of similar to 0.3 V (or similar to 20% of charge lose after 10 years) is achieved. However, similar to 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide). (c) 2005 Elsevier B.V. All rights reserved.