In this article, a double gate poly-Si TFT structure is analyzed to study the variation of channel potential profile and threshold voltage with dielectric constant, metal work-function and other device parameters. Green's Function is used to obtain two-dimensional potential distribution. The potential profiles obtained give insight into the device behavior and an estimation of threshold voltage for the device under consideration. Device simulation is also done using ATLAS simulator and the results obtained are compared with proposed two-dimensional model. The modeled results are found to be in good agreement with simulated data. (c) 2005 Elsevier B.V. All rights reserved.