We report the growth of IV-VI diluted magnetic semiconductor Ge1-xMnxTe thin films on BaF2 (111) substrates with high Mn ion concentration (x=0.98) by solid-source molecular-beam epitaxy. The film structure and orientation were characterized by in-situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical concentration was determined by X-ray Photoelectron Spectroscopy (XPS). The thin film shows ferromagnetic ordering at 130 K, as determined from temperature-dependent magnetization. (c) 2005 Elsevier B.V. All rights reserved.