The zinc oxide (ZnO) thin films were deposited on glass substrate at room temperature by radio frequency (rf) magnetron sputtering method. The deposition rates of ZnO thin films were investigated as a function of rf power. As the rf power increased, the deposition rates increased. The effects of rf power were investigated in terms of optical and electrical properties of ZnO thin films. At high rf power, high transmittance more than 80% and high resistivity of ZnO thin films were obtained. With increasing rf power, the surface roughness of ZnO thin films increased. It was observed that the ZnO thin films deposited in high rf power have excellent optical properties and high resistivities.