Programmable metallization cell structure with a device diameter of 2 mu m composed of Ag-Ge-Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a 150 nm thick Ag-30(Ge0.3Te0.7)(70) electrolyte switches at 0.2 V from an "off" state resistance R-off Close to 10(6) Omega to an "on" resistance state R-on more than four orders of magnitude lower for this programming current. The switching characteristics were closely related with a diffusion of silver anode into silver-saturated GeTe electrolyte films. (c) 2006 American Vacuum Society.