SiCN nanoparticle films were grown on an AIN buffered Si (100) substrates by radio frequency magnetron sputtering at low temperature. X-ray diffraction indicated that only nanocrystal structure of SiCN (111) can be formed under low-temperature deposition, irrespective to the deposition time or power. An increase in deposition time is found to increase nanoparticle coalescence, enlarge nanoparticle sizes, reduce surface nanoparticle densities and improve PL intensities. SEM and PL investigations reveal two Correlations: lower surface nanoparticle density correlates with diminished PL bandwidth and increased coalescence of nanoparticle films correlates with higher PL intensity. Moreover, the higher deposition power seems to cause an increased agglomeration of nanoparticle films, and hence increase the PL intensity of nanoparticle films. (c) 2005 Published by Elsevier B.V.