Electrical properties of metal/SiC/p-Si(100) structures have been examined under conditions with and without light exposure. SiC films are formed by thermal chemical vapor deposition using a monomethylsilane gas, and are amorphous. The dark current density of the metal/SiC/p-Si structure at positive voltages is lower than that at negative voltages. The difference between the photo and dark current of metal/SiC/p-Si structures is relatively large at positive voltages. A SnO2/SiC/p-Si structure has high sensitivity compared with an Al/SiC/p-Si structure. Metal/SiC/p-Si structures can be used as photodetectors at positive voltages. (c) 2005 Elsevier B.V. All rights reserved.