The development and characterization of a silicon carbide (SiC) deposition process from a single source precursor, 1,3-disilabutane, in a large-scale reactor is described. Deposition was performed simultaneously on fifteen, 4 in. Si wafers in a 4 or 6 in. wafer-capable horizontal low-pressure chemical vapor deposition reactor. Amorphous SiC is obtained at temperatures of 750 S C and below, while some polycrystallinity is obtained at temperatures of 800 degrees C and above. Highly uniform and relatively smooth films are realized using a closed wafer boat. A maximum growth rate of 0.45 mu m/h is attained at 750 degrees C. Residual stress in the film is characterized and found to be greater than 1.3 GPa (tensile) across a wide range of deposition temperatures. Stress profiling is performed to investigate the stress distribution throughout the films. Microfabrication on the wafer level using SiC as a structural layer is also demonstrated. (c) 2006 The Electrochemical Society.