In this article, we demonstrate the effect of the postdeposition annealing for the HfO2 trapping layer on the performance of the Si-oxide-nitride-oxide-silicon-type flash memories. It was found that the memory window becomes larger while the retention and endurance characteristics get worse as the annealing temperature increases. This was ascribed to the larger amount and the shallower energy levels of the crystallization-induced traps as compared to the traps presented in the as-fabricated HfO2 film. Finally, in the aspect of disturbances, we show only insignificant read, drain, and gate disturbances presented in the three samples in the normal operation. (c) 2006 American Vacuum Society.