A series of p- and n- GaAs- S- C(n)H(2)n(+1) vertical bar vertical bar Hg junctions are prepared, and the electronic transport through them is measured. From current-voltage measurements, we find that, for n- GaAs, transport occurs by both thermionic emission and tunneling, with the former dominating at low forward bias and the latter dominating at higher forward bias. For p- GaAs, tunneling dominates at all bias voltages. By combining the analysis of the transport data with results from direct and inverse photoemission spectroscopy, we deduce an energy band diagram of the system, including the tunnel barrier and, with this barrier and within the Simmons tunneling model, extract an effective mass value of 1.5 - 1.6me for the electronic carriers that cross the junctions. We find that transport is well- described by lowest unoccupied and highest occupied states at 1.3 - 1.4 eV above and 2.0 -2.2 eV below the Fermi level. At the same time, the photoemission data indicate that there are continua of states from the conduction band minimum and the valence band maximum, the density of which varies with energy. On the basis of our results, it appears likely that, for both types of junctions, electrons are the main carrier type, although holes may contribute significantly to the transport in the p- GaAs system.