Rare-earth scandate materials have been identified as candidates for gate dielectrics in metal oxide semiconductor transistors because of their high thermal stability against crystallization in combination with a high-dielectric constant. In this study, tris(1-methoxy-2-methyl-2-propoxy)dysprosium [Dy(mmp)(3)] and Sc(mmp)(3) are evaluated as metallorganic chemical vapor deposition precursors for deposition of DyxScyOz on silicon at moderate temperatures (450-600 degrees C). These temperatures allow easy integration into a standard transistor flow. The layers are uniform with a close to bulk density and smooth top surface. Electrical characterization measurements shows a gate leakage current of 1.8x10(-5) A/cm(2) at 4.5 V for an equivalent oxide thickness of 2.0 nm. Limited hysteresis (9 mV) and frequency dispersion (3% difference in accumulation capacitance between 10 and 250 kHz) was observed.