In this work, ZnS thin films with single-phase zinc blende structure were fabricated on silica glass substrates by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD). Dimethyl zinc and hydrogen sulfide were used as the precursors. The films were characterized using X-ray diffraction and photoluminescence spectroscopy. The optimal temperature for ZnS growth, 350 degrees C, was confirmed via a series of growth at different temperatures. In order to obtain stoichiometric ZnS films using PA-MOCVD, larger VI/II gas flow ratios was needed than the one used without plasma assistance. The reason for this phenomenon is discussed. (c) 2006 Elsevier B.V. All rights reserved.