Polycrystalline silicon (poly-Si) thin-films are made on planar and textured glass substrates by solid phase crystallization (SPC) of in situ doped amorphous silicon (a-Si) deposited by electron-beam evaporation. These materials are referred to by us as EVA materials (SPC of evaporated a-Si). The properties of EVA poly-Si films are characterised by Raman microscopy, transmission electron microscopy, and X-ray diffraction. A narrow and symmetrical Raman peak at a wave number of about 520 cm(-1) is observed for all samples, showing that the films are fully crystallized. X-ray diffraction (XRD) reveals that the films are preferentially (111)-oriented. Furthermore, the full width at half maximum of the dominant (I 11) XRD peaks indicates that the structural quality of the films is affected by the a-Si deposition temperature and the surface morphology of the glass substrates. A-Si deposition at 200 instead of 400 degrees C leads to an enhanced poly-Si grain size. On textured glass, the addition of a SiN barrier layer between the glass and the Si improves the poly-Si material quality. No such effect occurs on planar glass. Mesa-type solar cells are made from these EVA films on planar and textured glass. A strong correlation between the cells' current-voltage characteristics and their crystalline material quality is observed. (c) 2006 Elsevier B.V. All rights reserved.