The etching of Si(100) surfaces in ultrapure water was studied with a combination of infrared spectroscopy (FTIR) and scanning tunneling microscopy (STM). While the FTIR results show that the initially rough H/Si(100) surface becomes highly homogeneous during etching, a phenomenon generally associated with surface smoothing, STM images reveal that the homogeneity is associated with the formation of well-defined etch hillocks. After many hours of etching, the resulting H-terminated surface is composed of stripes of atomically flat Si(100) terminated by etch hillocks bounded by {111}- and {110}-oriented microfacets. Polarization analysis of the Si-H stretching modes provides strong evidence for uniform dihydridetermination of the flat regions, with the narrow (similar to 25 angstrom) width of these stripes allowing for relaxation of steric strain between neighboring dihydrides. The unusual hill-and-valley etch morphology is attributed to the effects of steric strain on the reactivity of sites on the etched surface.