화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.24, No.4, 2004-2008, 2006
Growth temperature dependent evolution of the interface structure in Co2FeSi/GaAs(001) hybrid structures
The growth temperature dependence of the interface perfection of full Hensler alloy CO2FeSi/GaAs(001) hybrid structures have been examined using transmission electron microscopy (TEM) and high-resolution x-ray diffraction (HRXRD). The film grown at 100 degrees C shows an atomically abrupt interface without interfacial reaction. In the high-resolution transmission electron microscope (HRTEM) image from the 200 degrees C film, however, a 1-2 ML (monolayer) interlayer having a contrast different from both CO2FeSi and GaAs was observed at the interface, indicating that interfacial reaction starts at this growth temperature. The layer grown at 350 degrees C shows a further reacted interface in the HRTEM image, i.e., undulations and large steps at the interface. The interface perfection strongly correlates with the in-plane uniaxial magnetic anisotropy (UMA) as them UMA constant rapidly decreases above 200 degrees C in accordance with the progress of the interfacial reaction. (c) 2006 American Vacuum Society.