GaN crystallites covered with gallium oxides were fabricated and their cathodoluminescence (CL) spectra were observed. The intensity of CL spectra observed from the GaN crystallites with the oxides was higher than that in the case without the oxides. This is due to the reduction of surface recombination and carrier confinement. Electroluminescent devices operating in the UV spectral region were also fabricated using the GaN crystallites covered with gallium oxides. (c) 2006 American Vacuum Society.