SiC based electronic devices are extremely promising candidates for high power, temperature, and radiation applications. However, a variety of defects created during the substrate and subsequent epitaxial growth persists. Many of these defects are electrically active and adversely affect the electrical characteristics of these devices. Determining which defects are the most damaging, how they are created, their structure, and methods for removing them are four basic steps paramount to the creation of reliable SiC based power devices. Here we present optical beam induced current (OBIC) imaging of various dislocations, stacking faults, and defects, which along with electroluminescence (EL) imaging reveals the electrical activity and the identifying features of the various defects. A strong correlation is established between the features observed via EL and those seen using OBIC imaging.