Oxynitride thin films are used in important optical applications and as gate dielectric for MOS devices. Their traditional deposition processes have the drawbacks that high temperatures are needed, high mechanical stresses are induced and the deposition rate is low. Plasma assisted processes may alleviate these problems. In this study, oxynitride films were deposited at room temperature through the chemical reaction of silane, nitrogen and nitrous oxide (N2O), in a conventional LPCVD furnace, which was modified into a high density Inductively Coupled Plasma (ICP) reactor. Deposition rates increased with applied coil power and were never lower than 10 nm/min, quite high for room temperature depositions. The films' refractive indexes and FTIR spectra indicate that for processes with low N2O gas concentrations, when mixed together with N-2 and.4, nitrogen was incorporated in the film. This incorporation increased the resistivity, which was up to 70 G Omega cm, increased the refractive index, SiH4, from approximately 1.47 to approximately 1.50, and decreased the dielectric constant of these films, which varied in the 4-14 range. These characteristics are adequate for electric applications e.g. for TFT fabrication on glass or polymers which can not stand high temperature steps. (c) 2005 Elsevier B.V. All rights reserved.