An integrated multi-electron-beam blanker array is proposed for the multi-electron-beam source reported by van Bruggen et al. [J. Vac. Sci. Technol. B 23, 2833 (2005)], which aims at the throughput improvement of sub-10-nm electron beam induced deposition. The integrated blanker array consists of a current limiting aperture array, a blanker array, and a microaperture-lens array. The integrated blanker array generates 100 individually controlled beamlets, projecting the virtual source image in the principle plane of the field lens. The electrostatic cross-talk, charging, and contamination are reduced by the grounded current limiting aperture plate above the blankers. The blanker array and microaperture-lens array are fabricated on a first wafer, while the current limiting aperture array is fabricated on a second, 100 Am thick wafer. The wafers will be bonded with an alignment accuracy of approximately 200 nm. The first test chips, where the blankers are grouped and controlled by external circuitries, are under fabrication and key processes are tested. (c) 2006 American Vacuum Society.