Highly polycrystalline copper indium diselenide (CuInSe2) thin films on molybdenum substrate were successfully grown at 330 degrees C through two-stage metal organic chemical vapor deposition (MOCVD) method by using two precursors at relatively mild conditions. First, phase pure InSe thin film was prepared on molybdenum substrate by using a single-source precursor, di-mu-methylselenobis(dimethylindium). Second, on this InSe/Mo film, bis(ethylisobutyrylacetato) copper(II) designated as Cu(eiac)(2) was treated by MOCVD to produce CuInSe2 films. The thickness and stoichiometry of the product films were found to be easily controlled in this method by adjusting the process conditions. Also, there were no appreciable amounts of carbon and oxygen impurities in the prepared copper indium diselenide films. (c) 2006 Elsevier B.V. All rights reserved.