Thin solid films of copper, aluminum and nichrome have been deposited on glass substrates with thickness ranging from 20 nm to 200 nm, using the anodic vacuum arc deposition technique. Electrical resistivity and average grain size of deposited thin films have been measured and their dependence on the deposition process parameters has been investigated. Thickness dependence of resistivity has also been compared with numerically generated results using Fuchs-Sondheimer theory and Mayadas-Shatzkes theory which has been found to be in good agreement for film thickness greater than 80 nm. The resistivity values of Cu, Al and NiCr has been found to take a minimum value (approaching that of corresponding bulk material) of 80 A arc current and a substrate bias of around -50 V (c) 2006 Elsevier B.V. All rights reserved.