Manganese-doped zinc silicate photoluminescent films were prepared on silicon wafer using pulsed laser deposition technique. The effects of heat treatment on the optical and structural properties were investigated by means of X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), and photoluminescence (PL) spectra. It was found in XRD patterns and FTIR that crystalline zinc silicate was formed on the silicon wafer when the annealing temperature was above 700 degrees C. The PL spectra showed that the peak wavelength of the green emission was at 525 nm with a decay time of 12.5 ms. (c) 2006 Published by Elsevier B.V.