Thermal stability of silver selenide thin films grown on silicon substrates by the solid state reaction of Se and Ag films is studied. The as-deposited as well as films annealed at different temperatures for 60 min in argon were investigated using X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and scanning electron microscopy (SEM) measurements. Analysis of the XRD and RBS data of as-deposited films indicated the formation of single phase orthorhombic silver selenide from the reaction of Ag and Se films at room temperature. RBS spectra of films annealed at 473 K and above showed features characteristic of agglomerated morphology. SEM images showed the smooth morphology of the as-deposited films to evolve into a discontinuous island state with annealing temperature. The results suggest that above similar to 473 K, the films are thermally unstable and agglomerate through holes generated at grain boundaries. (c) 2006 Elsevier B.V. All rights reserved.