Transparent p-n heterojunctions composed of zinc oxide, copper-chromium oxide, and indium tin oxide (ITO) films were fabricated by pulsed laser deposition (PLD) on glass substrates at temperatures as low as 500 degrees C. The rectifying characteristics were observed in the current-voltage curves of the prepared junctions. Undoped and Mg-doped CuCrO2 films were examined for their suitability as the p-type semiconductor layer for these junctions. A p-n junction with an n(+)-ZnO/n-ZnO/p-CuCrO2:Mg/ITO/glass structure exhibited the highest conductivity among all the samples. This 0.4-mu m-thick junction exhibited an optical transparency of greater than 80% in the visible range. (c) 2006 Elsevier B.V All rights reserved.