Transparent conductive oxide thin film of tungsten-doped In2O3 (IWO) has been prepared by reactive direct current magnetron sputtering from the tungsten-embedded indium metal target. The effect of tungsten doping content on the optoelectrical properties of IWO films was investigated. The lowest resistivity of 2.7 x 10(-4) Omega(.)cm was reproducibly obtained, with carrier mobility greater than 57 cm(2) V-1 s(-1) and carrier concentration of 4.0 x 10(20) cm(-3), as well as the transmission in visible light range exceeding 80%. X-ray diffraction measurements indicate that the as-deposited IWO films are well crystallized with a preferential orientation of (222). (c) 2006 Elsevier B.V. All rights reserved.