We have grown indium oxide thin films on silicon substrates at low temperature by metal organic chemical vapor deposition. Polycrystalline film growth could only be obtained at temperatures below 400 degrees C. Above 400 degrees C, metallic indium deposition dominated. We have investigated the effect of substrate temperature and reactor pressure on the film growth and structural properties in the range of 250-350 degrees C and 5 * 10(3)-4 * 10(4) Pa. The film grown at 300 degrees C exhibited a resistivity of about 3.6 x 10(-3) Omega cm and a maximal optical transmittance of more than 95% in the visible range. The film showed an optical band gap of about 3.6 eV. (c) 2006 Elsevier B.V. All rights reserved.