Applied Chemistry, Vol.11, No.2, 397-400, November, 2007
C2F6/Ar 가스를 이용한 TiO2 박막의 유도결합 플라즈마 반응성 이온 식각
Inductively coupled plasma reactive ion etching of TiO2 Thin Films using a C2F6/Ar gas
The etch characteristics of TiO2 thin films were studied in a high density inductively coupled plasma. The etch rates and etch profiles of TiO2 thin films were investigated as a function of C2F6 gas concentration in C2F6/Ar gas mixture. Etch rates were measured by dektak surface profilometer and etch profiles were observed by field emission scanning electron microscope. Best etch profile of TiO2 thin film was obtained at 60% C2F6 gas concentration.