Plasma chemical vapor deposition (P-CVD) of palladium films by a microcapillary plasma has been done successfully by using palladium hexafluoroacetylacetonate (Pd(C5HF6O2)(2)) as a precursor. The dependence of the palladium profiles in deposited films and the process completion times on the process parameters is investigated. In addition, the model of the P-CVD is presented and the numerical analysis based on the model is carried out using some assumptions. The model simulation can predict effectively the experimental results. The experimental and calculated results indicate that the gas velocity and current density are the important parameters to decide the palladium profiles of deposited films and the process completion times. (c) 2006 Elsevier B.V. All rights reserved.