Silicon Dioxide (SiO2) thin film deposition processes were studied with the use of classical Molecular Dynamics (MD) simulations combined with Monte Carlo (MC) simulations. The MC simulations are shown to efficiently emulate thermal relaxation processes during deposition. Dependence of deposited film properties on the incident kinetic energies is examined from the numerical simulations. (c) 2006 Elsevier B.V All rights reserved.