We report the formation of (001)-textured gains in (111) polycrystalline silicon (poly-Si) by Ni-mediated crystallization of amorphous silicon (a-Si) using a cap layer (MICC). The a-Si precursor deposited by plasma enhanced chemical vapor deposition was dehydrogenated at 550 degrees C and then crystallized at 580 degrees C. The (001)-textured grains appear in the network of (111) poly-Si of similar to 100 mu m grains, which was confirmed by the analysis of electron back-scattered diffraction. From the kinetic study of the grain growth, it is found that the nucleation rate of (001) nuclei is higher than that of (111) ones, but the (111) grains grow faster than that of (001) grains. (c) 2006 Elsevier B.V. All rights reserved.