Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs(001)

Jenichen B; Kaganer VM; Braun W; Herfort J; Shayduk R; Ploog KH

Thin Solid Films, Vol.515, No.14, 5611-5614, 2007

DOI10.1016/j.tsf.2006.12.119 Export Citation

Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs(001)

Jenichen B, Kaganer VM, Braun W, Herfort J, Shayduk R, Ploog KH

Molecular beam epitaxy of Fe3Si films on GaAs (001) is studied in situ by grazing incidence X-ray diffraction. Fe3Si grows layer-by-layer. During deposition the growth front roughens as indicated by the damping of the X-ray oscillations and corresponding atomic force micrographs. The X-ray oscillations are modified during growth at substrate temperatures of 180 degrees C and below. (c) 2006 Elsevier B.V. All rights reserved.

Keywords:MBE;X-ray diffraction;surface topography;ferromagnetic materials