The reaction of yttrium (Y) on (001) silicon (Si) with low temperature annealing is investigated for different coverages of Y using in situ x-ray photoelectron spectroscopy. The authors have also performed oxidation studies for Y on Si in the formation of yttrium silicate by a two-step process. This consists of an ex situ oxidation of Y-Si film, which is formed from low temperature annealing in vacuum. These films were then probed with depth profiling x-ray photoelectron spectroscopy. They report on three general reaction phases of Y on Si that are coverage dependent. Different coverages show differences in Si mixing and selective ultrahigh vacuum oxidation. They also report on the self-limiting formation of yttrium silicate at room temperature and low annealing temperature, which is insensitive to the annealing ambient. They also highlight the importance of oxygen partial pressure in both initial silicate formation and the extent of oxidation at different annealing temperatures. Finally, the authors also show that a high oxygen diffusion barrier prevents the oxidation of the entire Y-Si film. (C) 2007 American Vacuum Society.