We report on the observation of a strong KrF laser-induced ultraviolet absorption and refractive index changes from germanium-doped and boron co-doped silica (Ge-B-SiO2) planar waveguides. The Ge-B-SiO2, planar waveguides on a pure silica substrate with optical propagation-loss of similar to0.2 dB/cm at 1.55 mum have been deposited by a new approach namely inductively coupled plasma-enhanced chemical vapor deposition. We have noticed that samples when annealed at 1000 degreesC are exhibiting very limited ultraviolet absorption at similar to240 nm, however, an enhancement has been found with the similar to240 nm absorption band due to the hydrogenation treatments. KrF laser has partially bleached the absorption at similar to240 nm and that has generated new paramagnetic site such as GeE' centers with significant changes in the ultraviolet related absorption and refractive index of Ge-B-SiO2 waveguides. (C) 2003 Elsevier B.V. All rights reserved.