Undoped and N-In codoped ZnO films were deposited on Si(l 0 0) by ultrasonic spray pyrolysis. The structural, electrical and optical properties of the ZnO based films were investigated. Results indicate that the low-resistivity p-type ZnO film with the resistivity of 5.04 x 10(-3) Omega cm, high mobility of 3 3.5 cm(2) Ns, carrier concentration of 3.69 x 10(19) cm(-3), and Seebeck coefficient of 825 muV/K was obtained by the codoping of N and In. In the photoluminescence measurement, a strong near-band-edge emission was observed for both undoped and codoped films, while the deep-level emission was almost undetectable. (C) 2004 Elsevier B.V. All rights reserved.