Li-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering. The influence of post-annealing temperature on the electrical, structural, and optical properties of the films was investigated. A conversion from p-type conduction to n-type in a range of temperature was confirmed by Hall measurement. The optimal p-type conduction is achieved at the annealing temperature of 500 degrees C with a resistivity of 57 Omega cm, carrier concentration of 1.07 x 10(17) cm(-3) and Hall mobility of 1.03 cm(2) V-1 s(-1). From the temperature-dependent PL analysis, the energy level of Li-Zn acceptor was determined to be similar to 140 meV above the valence band. (c) 2005 Elsevier B.V. All rights reserved.