Highly crystalline beta-Ga2O3 nanowires with two morphologies have been synthesized through physical evaporation of Te doped GaAs powder in Ar atmosphere. Growth is not based on VLS mechanism due to absence of Te. S in place of Te resulted in similar nanostructures. Some of the nanowires exhibit herringbone morphology with presence of hexagonal crystallites in regular spacing along the nanowire axis. The crystal planes of the nanowires were found to be parallel to one of the facets of the crystallites implying these crystallites may serve as the nucleation centers for the growth. Other dominant nanowire morphology is single crystalline nanoribbons. (c) 2006 Elsevier B.V. All rights reserved.