Air-stable n-channel field-effect transistors based on thin films of the compound, N, N'-bis(4-trifluoromethylbenzyl) perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB), were fabricated, and the effects of surface treatment and substrate temperature at the film deposition on the electron mobility of the transistors were studied. The maximum mobility, 4.1 x 10(-2) cm(2) V-1 S-1 in the saturation region (1.7 x 10-2 cm(2) V-1 s(-1) in the linear region), was obtained in air for the film deposited at 95 degrees C on the SiO2 surface modified with hexamethyldisilazane. The high electron affinity of PTCDI-TFB estimated at 4.8 eV by photoelectron yield spectroscopy and UV-Vis absorption spectroscopy, which is ascribable to the trifluoromethylbenzyl groups, is likely to result in the observed stable transistor operation in air. (c) 2007 Elsevier B.V. All rights reserved.