Chemistry Letters, Vol.35, No.11, 1236-1237, 2006
n-Type and ambipolar FET characteristics using pyrazinophenanthrolines linked with oligothiophenes
Phenanthroline rings were used to generate n-type FET properties for the first time. A FET device based on a pyrazinophenanthroline with a quinquethiophene unit showed clear ambipolar FET characteristics.